VBFB1208N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 20(±V) | 3V | 25A | 56 (mΩ) | Trench |
- Type: Single N-channel FET (Single N)
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance at VGS=10V (m次): 56
- Maximum drain current (ID): 25A
- Technology: Trench structure (Trench)
Package: TO251
Domain and module applications:
Application examples:
1. Power module: VBFB1208N can be used as a switching device in the power module to stabilize and regulate voltage to ensure the stability and efficiency of the power system.
2. Electric vehicle charger: Due to its high voltage and high current characteristics, VBFB1208N is suitable for the switching power supply part of the electric vehicle charger to help achieve fast charging and efficient energy conversion.
3. Industrial automation control: In industrial automation systems, VBFB1208N can be used in switching power supplies, motor drivers and other high-power applications to provide reliable power control and electrical isolation.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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