VBFB1203M Product details
Product introduction:
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 20(±V) | 3V | 8A | 270(mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 200V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (miohms) at gate-source voltage 10V: 270
- Drain current (ID): 8A
- Technology: Trench
Package: TO251
Domain and module applications:
1. Power module: Since VBFB1203M has higher rated voltage and drain current, it is suitable for various power modules, such as DC regulators and switching power supplies. In DC voltage regulators, it can be used as a power switching device at the output to achieve voltage regulation and overload protection.
2. Power tools: This MOSFET can be used in motor control modules in power tools, such as electric drills and electric saws. Its high voltage and low drain-source resistance characteristics ensure efficient operation and long-term stability of motor drive systems.
3. LED lighting: In LED lighting systems, VBFB1203M can be used as a power switching device in the LED drive circuit to achieve brightness adjustment and current control of LED lights. Its high voltage and low drain resistance characteristics ensure the stability and reliability of LED lighting systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image