VBFB1102M is a single-channel N-channel field effect transistor launched by VBsemi Company. It has the following characteristics and performance:

1. **High voltage tolerance**: The rated voltage (VDS) is 100V, suitable for applications requiring higher voltage tolerance.
2. **Wide voltage range**: Gate-source voltage (VGS) can reach ±20V, which can adapt to different drive circuit requirements.
3. **Low threshold voltage**: The threshold voltage (Vth) is 1.5V, which indicates that the device can achieve reliable conduction at low voltage, which is beneficial to reducing power consumption.
4. **Higher on-resistance**: When the gate voltage is 10V, the drain-source resistance is 200mΩ, which has high on-resistance and is suitable for some specific circuit applications.
5. **Moderate drain current capacity**: The maximum drain current (ID) can reach 12A, suitable for driving medium power loads.

As a high-performance single-channel N-channel field effect transistor, VBFB1102M is suitable for various fields and modules such as automotive electronics, industrial control, power converters, household appliances, etc. It can provide stable and efficient power control and drive function.