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VBE2338 Product details

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Product introduction：

VBsemi's Single P series of products is a single P-channel field effect transistor (MOSFET), a multi-functional, high-performance electronic device suitable for many different application areas and modules. With the following parameters: VDS (drain-source voltage) is -30V, VGS (gate-source voltage) range is ±20V, and threshold voltage (Vth) is -1.7V. The on-resistance is 46mΩ at VGS=4.5V, 33mΩ at VGS=10V, and the maximum drain current (ID) is -38A (negative numbers represent P-channel devices). These MOSFETs are manufactured using Trench technology and are packaged in TO252.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V 20（±V） -1.7V -38A 46 (mΩ) 33 (mΩ) Trench
Brand: VBsemi
parameter:
-Single P
- VDS(V): -30
-VGS(㊣V): 20
- Vth(V): -1.7
- VGS=4.5V(m次): 46
- VGS=10V(m次): 33
- ID (A): -38
- Technology: Trench
Package: TO252

Domain and module applications：

, in power management modules, these MOSFETs can be used for functions such as power switches, DC-DC converters, and power inverters. Due to their high drain current and low on-resistance, they are also suitable for electric vehicle drive modules in electric vehicles (EV), hybrid vehicles (HEV) and electric bicycles (e-bikes). In addition, due to their high performance and reliability, they can also be used in motor drives and power switching units in industrial automation equipment. "
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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