Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-P |
-100V |
20（±V） |
-2V |
-8.8A |
|
280 (mΩ) |
250 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 280m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 250m次
- Quiescent drain current (ID): -8.8A
Domain and module applications：
Application introduction:
VBE2102M is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as power adapters, voltage regulators, etc., to provide stable and reliable power output.
2. Automotive electronic systems: In automotive electronic systems, VBE2102M can be used in battery management systems and motor control modules of electric vehicles to ensure high performance and drive control of the vehicle.
3. LED lighting system: Suitable for power switch modules in LED lighting systems, such as LED drivers, lighting controllers, etc., to achieve high-efficiency and adjustable lighting.
4. Industrial control equipment: This MOSFET can be used in power switches and drive control modules in industrial control equipment, such as industrial robots, PLC controllers, etc., to improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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