Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
900V |
30（±V） |
3.5V |
11A |
|
|
380(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBE19R11S
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Multi-EPI
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 380m次
- Maximum drain current (ID): 11A
-Package:TO252
Domain and module applications：
Applicable fields and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-power switching power supplies and voltage regulators.
2. Industrial control system: It can be used in power switch modules in industrial control systems to achieve precise control of industrial equipment.
3. High-end electric vehicle motor driver: In high-end electric vehicles, it can be used in motor drive modules to achieve high-efficiency electric vehicle drive.
4. Solar inverter: In a solar inverter, it can be used as a power switch module to convert solar energy into electrical energy and connect it to the grid.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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