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VBE19R08S Product details

Product introduction:

Product introduction:

VBE19R08S is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO252. This product features high drain current and moderate on-resistance, making it suitable for a variety of high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 900V 30(±V) 3.5V 8A 560(mΩ) SJ_Multi-EPI
Detailed parameter description:

- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 560m次
- Maximum drain current (ID): 8A
- Technology: SJ_Multi-EPI
-Package:TO252

Domain and module applications:

Examples of applicable fields and modules:

1. Solar inverter: suitable for power switches and DC-AC converters in solar inverters to achieve effective utilization of solar energy.
2. Electric vehicle charging piles: In electric vehicle charging piles, they can be used for power switches and control circuits to achieve efficient and fast charging.
3. Industrial high-voltage power module: Among industrial high-voltage power modules, this product can be used in switching power supplies and DC-DC converters to provide stable high-voltage output.
4. LED lighting: Suitable for power switching and dimming control in LED lighting applications, providing efficient lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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