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VBE19R05S Product details

Product introduction:

Product introduction:

VBE19R05S is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO252. This product features high voltage withstand capabilities and low on-resistance, making it suitable for a variety of applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 900V 30(±V) 3.5V 5A 1500 (mΩ) SJ_Multi-EPI
Detailed parameter description:

- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 1500m次
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package:TO252

Domain and module applications:

Examples of applicable fields and modules:

1. Solar inverter: Since VBE19R05S has high drain-source voltage and low on-resistance, it is suitable for power switches and DC-AC converters in solar inverters.
2. Electric vehicle charging piles: In electric vehicle charging piles, this product can be used in power switches and control circuits to achieve efficient and fast charging.
3. Industrial power module: Among industrial power modules, VBE19R05S can be used in switching power supplies and DC-DC converters to provide stable power output.
4. LED lighting: Suitable for power switching and dimming control in LED lighting applications to provide efficient lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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