VBE195R03 Product details
Product introduction:
VBE195R03 is a Single N-type field effect transistor produced by VBsemi and is suitable for various electronic applications. It has high voltage tolerance and low threshold voltage for reliable performance in different scenarios.
Detailed parameter description:
- VDS(V): Maximum drain-source voltage is 950V.
- VGS(±V): Gate-source voltage range is ±30V.
- Vth(V): Threshold voltage is 3.3V.
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 6750 mΩ.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 5400 mΩ.
- ID (A): Maximum drain current is 3A.
- Technology: Using Plannar technology.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 950V | 30(±V) | 3.3V | 3A | 6750 (mΩ) | 5400 (mΩ) | Plannar |
Brand: VBsemi
Parameters: Single N
VDS(V): 950
VGS(㊣V): 30
Vth(V): 3.3
VGS=4.5V(m次): 6750
VGS=10V(m次): 5400
ID(A): 3
Technology: Planner
Package: TO252
Domain and module applications:
Examples of applicable fields and modules:
1. Industrial control systems: Due to its high voltage tolerance and reliability, VBE195R03 can be used as power management and circuit protection modules in industrial control systems.
2. Automotive electronics: In the field of automotive electronics, this model can be used in drive and power inverter modules for electric vehicles to provide high efficiency and reliability.
3. Solar inverter: Due to its high voltage tolerance and low threshold voltage, VBE195R03 can achieve efficient energy conversion and stable power output in solar inverters.
Technical support:
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