VBE18R09S Product details
Product introduction:
VBE18R09S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO252.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 30(±V) | 3.5V | 9A | 510(mΩ) | SJ_Multi-EPI |
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 510m次
- Maximum drain current (ID): 9A
Domain and module applications:
- Solar inverter: VBE18R09S is suitable for power conditioning modules in solar inverters, which can convert the DC power generated by solar panels into AC power that can be used in the grid.
- Industrial motor control: In the industrial field, this product can be used in switching power supplies, frequency converters and power transmission systems in industrial motor control systems to achieve efficient control of industrial equipment.
- Automotive electronics: VBE18R09S can be used in the drive system of electric vehicles, such as motor drive controllers of electric vehicles, to provide efficient and reliable power output.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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