VBE18R08S Product details
Product introduction:
VBsemi's VBE18R08S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO252.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 30(±V) | 3.5V | 8A | 550(mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 550
- Maximum drain current (ID): 8A
Domain and module applications:
1. Automotive electronics: Because VBE18R08S has a high drain-source voltage and a large drain current, it can be used in electric vehicle control modules in automotive electronic systems, such as motor drivers and power inverters.
2. Power management: In the fields of industrial and consumer electronics, VBE18R08S can be used in high-voltage power management modules, such as switching regulators and DC-DC converters, to achieve efficient energy conversion and stable power output.
3. Solar inverter: Due to its high voltage and high current characteristics, VBE18R08S is suitable for the power module of solar inverter, which is used to convert solar power into usable AC power.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image