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VBE18R08S Product details

Product introduction:

Product introduction:
VBsemi's VBE18R08S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO252.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 800V 30(±V) 3.5V 8A 550(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 550
- Maximum drain current (ID): 8A

Domain and module applications:

Examples of applicable fields and modules of this product:
1. Automotive electronics: Because VBE18R08S has a high drain-source voltage and a large drain current, it can be used in electric vehicle control modules in automotive electronic systems, such as motor drivers and power inverters.
2. Power management: In the fields of industrial and consumer electronics, VBE18R08S can be used in high-voltage power management modules, such as switching regulators and DC-DC converters, to achieve efficient energy conversion and stable power output.
3. Solar inverter: Due to its high voltage and high current characteristics, VBE18R08S is suitable for the power module of solar inverter, which is used to convert solar power into usable AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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