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VBE185R04 Product details
Back to previous pageProduct introduction：
Product introduction of this model:
VBE185R04 is a single-channel N-type MOSFET produced by VBsemi Company. It adopts Plannar technology and is packaged in TO252. This product has the following main features:
- The rated drain-source voltage (VDS) is 850V and can withstand higher voltages.
- The standard gate-source voltage (VGS) is ±30V and the gate threshold voltage (Vth) is 3.5V, which can be applied to a variety of drive circuits.
- When VGS=4.5V, the on-resistance is 3375mΩ, and when VGS=10V, the on-resistance is 2700mΩ. It has lower on-resistance, which is beneficial to reducing power consumption and improving efficiency.
- The maximum drain current (ID) is 4A, suitable for small and medium power applications.
VBE185R04 is a single-channel N-type MOSFET produced by VBsemi Company. It adopts Plannar technology and is packaged in TO252. This product has the following main features:
- The rated drain-source voltage (VDS) is 850V and can withstand higher voltages.
- The standard gate-source voltage (VGS) is ±30V and the gate threshold voltage (Vth) is 3.5V, which can be applied to a variety of drive circuits.
- When VGS=4.5V, the on-resistance is 3375mΩ, and when VGS=10V, the on-resistance is 2700mΩ. It has lower on-resistance, which is beneficial to reducing power consumption and improving efficiency.
- The maximum drain current (ID) is 4A, suitable for small and medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 850V | 30（±V） | 3.5V | 4A | 3375 (mΩ) | 2700 (mΩ) | Plannar |
Detailed parameter description of this model product:
1. Product model: VBE185R04
2. Brand: VBsemi
3. Parameters:
- Type: Single N-type MOSFET
- Technology: Plannar
-Package: TO252
- Rated drain-source voltage (VDS): 850V
- Standard gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 3375m次
- On-resistance when VGS=10V: 2700m次
- Maximum drain current (ID): 4A
1. Product model: VBE185R04
2. Brand: VBsemi
3. Parameters:
- Type: Single N-type MOSFET
- Technology: Plannar
-Package: TO252
- Rated drain-source voltage (VDS): 850V
- Standard gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 3375m次
- On-resistance when VGS=10V: 2700m次
- Maximum drain current (ID): 4A
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBE185R04 is suitable for designing power modules in the industrial and communication fields, such as switching power supplies, inverters and voltage regulators, etc., which can achieve stable output of high-voltage power supply.
2. High-voltage switching power supply: Since VBE185R04 has a higher rated voltage and lower on-resistance, it can be used as a power switching element in high-voltage switching power supplies for industrial equipment and high-end consumer electronics.
3. Solar inverter: This type of MOSFET is suitable for the power switch module in the solar inverter, used to convert the DC power generated by the solar panel into AC power and connect it to the power grid.
4. Automotive electronics: VBE185R04 can be used in power management, motor control and battery management modules in automotive electronic systems to achieve efficient control and management of automotive electronic equipment.
5. Industrial automation: In the field of industrial automation, VBE185R04 can be used to design industrial control equipment and robot control systems to realize switching and regulation of high-voltage circuits.
1. Power module: VBE185R04 is suitable for designing power modules in the industrial and communication fields, such as switching power supplies, inverters and voltage regulators, etc., which can achieve stable output of high-voltage power supply.
2. High-voltage switching power supply: Since VBE185R04 has a higher rated voltage and lower on-resistance, it can be used as a power switching element in high-voltage switching power supplies for industrial equipment and high-end consumer electronics.
3. Solar inverter: This type of MOSFET is suitable for the power switch module in the solar inverter, used to convert the DC power generated by the solar panel into AC power and connect it to the power grid.
4. Automotive electronics: VBE185R04 can be used in power management, motor control and battery management modules in automotive electronic systems to achieve efficient control and management of automotive electronic equipment.
5. Industrial automation: In the field of industrial automation, VBE185R04 can be used to design industrial control equipment and robot control systems to realize switching and regulation of high-voltage circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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