Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO252 |
Single-N |
850V |
30(±V) |
3.5V |
2A |
|
8125 (mΩ) |
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBE185R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=4.5V: 8125m次
- On-resistance when VGS=10V: 6500m次
- Rated drain current (ID): 2A
- Technology: Plannar
-Package:TO252
Domain and module applications:
Examples of applicable fields and modules:
1. LED lighting module: VBE185R02 has high drain voltage and low on-resistance, and can be used as a switch controller in LED lighting modules to help achieve efficient power supply and dimming control of LED lights.
2. Solar photovoltaic inverter: In solar power generation systems, inverters are used to convert DC power into AC power. VBE185R02 can be used as a key component of the inverter to help achieve efficient conversion of solar energy and access to the grid.
3. Electric vehicle charging piles: In electric vehicle charging piles, power switching devices need to withstand high voltage and current. VBE185R02 can be used for switch control and power management of electric vehicle charging piles to achieve fast charging and safe power supply of electric vehicles.
4. Industrial control devices: In the field of industrial automation control, VBE185R02 can be used for switch control and power management in industrial control modules, such as temperature control, motor drive, etc., to help realize automation and intelligence in industrial production.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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