VBE17R08SE Product details
Product introduction:
VBsemi's VBE17R08SE is a Single N-type MOSFET manufactured using SJ_Deep-Trench technology. The product features a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is packaged in TO252 and is suitable for a variety of electronic devices and applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 8A | 540(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 540m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO252
Domain and module applications:
1. Industrial power module: Because VBE17R08SE has high drain-source voltage and drain current, it is suitable for industrial-grade power modules, such as factory automation equipment and power systems.
2. Electric vehicle charger: The high voltage and high current characteristics of this product make it suitable for electric vehicle charger modules, which can provide stable power output and fast charging speed.
3. Solar inverter: In solar power generation systems, VBE17R08SE can be used in inverter modules to convert DC power into AC power for use in the power grid or stored in batteries.
4. Power management module: Its low on-resistance and high drain-source voltage make it suitable for a variety of power management modules, including switching regulators and switching power supplies.
These examples illustrate that VBE17R08SE can be widely used in industrial, automotive, energy and electronic equipment and other fields, and plays an important role in different modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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