VBE17R07S Product details
Product introduction:
VBsemi's VBE17R07S is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO252, it has high performance and reliability.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 7A | 750 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Power module: VBE17R07S can be used in modules such as low-power switching power supplies, LED drive power supplies and inverters to provide high efficiency and stability.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as vehicle charging piles, vehicle power management and drive control of electric vehicles.
3. Industrial control: Suitable for industrial automation control systems, PLC control modules and motor drivers, etc., providing reliable power switching solutions.
4. LED lighting: In LED lighting applications such as outdoor lighting, landscape lighting, and stage lighting, this MOSFET can be used in power factor correction (PFC) circuits and LED driving power supplies to improve efficiency and stability.
These are just some examples, actual application depends on specific design needs and system requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image