VBE17R04SE Product details
Product introduction:
VBsemi's VBE17R04SE is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Deep-Trench technology and packaged in TO252, it has high performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 4A | 1100(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1100m次
- Maximum drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package: TO252
Domain and module applications:
1. Low-power switching power supply: VBE17R04SE is suitable for low-power switching power supply, inverter, DC-DC converter and other modules, providing stable power conversion and high efficiency.
2. Automotive electronics: In automotive electronic systems, this device can be used in applications such as vehicle power management, vehicle charging piles and drive control to achieve efficient energy conversion and precise control.
3. Industrial sensors: Suitable for industrial sensors, measuring instruments and controllers, providing stable power supply and reliable power switching solutions.
4. LED lighting control: In LED lighting controllers, dimmers and LED driving power supplies, this MOSFET can be used in power factor correction (PFC) circuits and stable power output.
These are just some examples, actual application depends on specific design needs and system requirements.
Technical support:
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