VBE16R15S Product details
Product introduction:
VBsemi's VBE16R15S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using SJ_Multi-EPI technology, packaged in TO252, and is suitable for a variety of application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 30(±V) | 3.5V | 15A | 240(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 240
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
1. Electric vehicle power supply system: Due to its high drain-source voltage and large drain current, it can be used in the driver and power supply system of electric vehicles.
2. Power converter: With stable performance and low drain-source resistance, it is suitable for the design of various power converters and inverters.
3. Industrial motor driver: It can be used as a switching device in industrial motor control systems to achieve efficient motor control and regulation.
4. Solar inverter: Due to its high voltage tolerance and high drain current, it can be used in the design of solar inverters to realize the conversion and utilization of solar energy.
These are just some examples, actual application depends on specific design and requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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