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VBE16R05 Product details

Product introduction:

Product introduction:
VBE16R05 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO252.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 600V 30(±V) 3.5V 6.2A 1000 (mΩ) 800 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 4.5V gate voltage: 1000m次
- Drain-source resistance (m次) at 10V gate voltage: 800m次
- Maximum drain current (ID): 6.2A
- Technology: Plannar

Domain and module applications:

Application example:
- Low power switching power supply: Since VBE16R05 has low drain current and moderate drain resistance, it is suitable for low power switching power supply modules such as small chargers and adapters.
- LED Driver: In LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Automotive electronics: As a key component in automotive electronic systems, the VBE16R05 can be used to drive low-power motors and perform control tasks for in-vehicle electronic equipment.
- Industrial Control: In industrial automation and control systems, the device can be used to control low-power devices and perform tasks such as sensor interfacing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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