Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
600V |
30（±V） |
3.5V |
2A |
|
|
2300 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE16R02S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 2300
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Low-power power module: Since VBE16R02S has moderate voltage and current tolerance, it can be used to design low-power power modules, such as low-power inverters, power adapters, etc.
2. LED driver: In the field of LED lighting, it can be used as a power switching device in the LED driver to achieve high-efficiency driving and dimming control of LED lights.
3. Household appliances: Suitable for power control and switching circuits in household appliances, such as televisions, washing machines, etc., to ensure normal operation and energy saving of the equipment.
4. Power tools: In power tools, it can be used as a power switching device to achieve high-efficiency drive and control of the motor, improving the performance and reliability of the tool.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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