VBE16R02S Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 30(±V) | 3.5V | 2A | 2300 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBE16R02S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 2300
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Low-power power module: Since VBE16R02S has moderate voltage and current tolerance, it can be used to design low-power power modules, such as low-power inverters, power adapters, etc.
2. LED driver: In the field of LED lighting, it can be used as a power switching device in the LED driver to achieve high-efficiency driving and dimming control of LED lights.
3. Household appliances: Suitable for power control and switching circuits in household appliances, such as televisions, washing machines, etc., to ensure normal operation and energy saving of the equipment.
4. Power tools: In power tools, it can be used as a power switching device to achieve high-efficiency drive and control of the motor, improving the performance and reliability of the tool.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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