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VBE16R02 Product details

Product introduction:

Product introduction:
Model: VBE16R02
Brand: VBsemi
Package: TO252
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=4.5V(mΩ): 3695
- VGS=10V(mΩ): 3560
-ID(A): 2
- Technology: Plannar

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 600V 30(±V) 3.5V 2A 3695 (mΩ) 3560 (mΩ) Plannar
Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=4.5V(m次): 3695 - Drain-source resistance at VGS=4.5V
6. VGS=10V(m次): 3560 - Drain-source resistance at VGS=10V
7. ID (A): 2 - Continuous Drain Current
8. Technology: Plannar - Planar structure technology

Domain and module applications:

Applicable areas and modules:
1. Low-power electronic devices: Due to its low drain-source resistance and low power consumption characteristics, it is suitable for low-power electronic devices such as sensor interfaces and microcontroller power management.
2. Battery management system: In small battery management systems, such as battery charge and discharge management modules in portable devices and smart home products.
3. Smart sensor network: Can be used for node devices in smart sensor networks, such as Internet of Things (IoT) devices and environmental monitoring sensors.
4. Medical devices: Suitable for low-power medical devices, such as portable medical monitoring equipment and medical sensors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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