VBE16R02 Product details
Product introduction:
Model: VBE16R02
Brand: VBsemi
Package: TO252
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=4.5V(mΩ): 3695
- VGS=10V(mΩ): 3560
-ID(A): 2
- Technology: Plannar
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 30(±V) | 3.5V | 2A | 3695 (mΩ) | 3560 (mΩ) | Plannar |
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=4.5V(m次): 3695 - Drain-source resistance at VGS=4.5V
6. VGS=10V(m次): 3560 - Drain-source resistance at VGS=10V
7. ID (A): 2 - Continuous Drain Current
8. Technology: Plannar - Planar structure technology
Domain and module applications:
1. Low-power electronic devices: Due to its low drain-source resistance and low power consumption characteristics, it is suitable for low-power electronic devices such as sensor interfaces and microcontroller power management.
2. Battery management system: In small battery management systems, such as battery charge and discharge management modules in portable devices and smart home products.
3. Smart sensor network: Can be used for node devices in smart sensor networks, such as Internet of Things (IoT) devices and environmental monitoring sensors.
4. Medical devices: Suitable for low-power medical devices, such as portable medical monitoring equipment and medical sensors.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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