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VBE165R05 Product details

Product introduction:

Product introduction:
VBsemi's VBE165R05 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=4.5V, the drain-source resistance (RDS(on)) is 2500mΩ; at VGS=10V, the drain-source resistance is 2000mΩ. Maximum drain current (ID) is 5A. The package form is TO252.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 30(±V) 3.5V 5A 2500 (mΩ) 2000 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=4.5V, the drain-source resistance (RDS(on)) is 2500m次; when VGS=10V, the drain-source resistance is 2000m次, and the maximum drain current (ID) is 5A .
- Technology: Made with Plannar technology.

Domain and module applications:

Examples of applicable fields and modules:
1. Power management module: Since VBE165R05 has a high drain-source voltage and moderate drain current, it can be used in power management modules such as DC-DC converters or inverters.
2. Automotive electronic systems: Its high drain-source voltage and high drain current make it suitable for battery management or drive control modules in automotive electronic systems.
3. Industrial automation: In the field of industrial automation, VBE165R05 can be used as power switch modules in control systems, such as industrial robots or automated production lines.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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