VBE165R05 Product details
Product introduction:
VBsemi's VBE165R05 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=4.5V, the drain-source resistance (RDS(on)) is 2500mΩ; at VGS=10V, the drain-source resistance is 2000mΩ. Maximum drain current (ID) is 5A. The package form is TO252.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 30(±V) | 3.5V | 5A | 2500 (mΩ) | 2000 (mΩ) | Plannar |
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=4.5V, the drain-source resistance (RDS(on)) is 2500m次; when VGS=10V, the drain-source resistance is 2000m次, and the maximum drain current (ID) is 5A .
- Technology: Made with Plannar technology.
Domain and module applications:
1. Power management module: Since VBE165R05 has a high drain-source voltage and moderate drain current, it can be used in power management modules such as DC-DC converters or inverters.
2. Automotive electronic systems: Its high drain-source voltage and high drain current make it suitable for battery management or drive control modules in automotive electronic systems.
3. Industrial automation: In the field of industrial automation, VBE165R05 can be used as power switch modules in control systems, such as industrial robots or automated production lines.
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