VBE165R02S Product details
Product introduction:
VBsemi's VBE165R02S is a single N-channel MOSFET using SJ_Multi-EPI technology for high performance and reliability. Key features of the product include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO252, which is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 30(±V) | 3.5V | 2A | 2300 (mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 2300
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Industrial power module: VBE165R02S can be used as a power switch in industrial power modules to help improve power conversion efficiency and stability.
2. Automotive electronic modules: Due to its high performance and reliability, this product is suitable for automotive electronic modules, such as on-board chargers and electric vehicle control systems.
3. LED lighting module: In the field of LED lighting, VBE165R02S can be used as a power switch in LED drive circuits to provide efficient energy conversion and stable power output.
4. Medical equipment modules: Due to its stability and reliability, this product is suitable for medical equipment modules, such as medical imaging equipment and surgical instrument control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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