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VBE165R02S Product details

Product introduction:

Product introduction:
VBsemi's VBE165R02S is a single N-channel MOSFET using SJ_Multi-EPI technology for high performance and reliability. Key features of the product include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO252, which is suitable for various application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 30(±V) 3.5V 2A 2300 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 2300
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: VBE165R02S can be used as a power switch in industrial power modules to help improve power conversion efficiency and stability.
2. Automotive electronic modules: Due to its high performance and reliability, this product is suitable for automotive electronic modules, such as on-board chargers and electric vehicle control systems.
3. LED lighting module: In the field of LED lighting, VBE165R02S can be used as a power switch in LED drive circuits to provide efficient energy conversion and stable power output.
4. Medical equipment modules: Due to its stability and reliability, this product is suitable for medical equipment modules, such as medical imaging equipment and surgical instrument control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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