Product introduction：
**Product Introduction:**
VBE165R02 is a unipolar N-type field effect transistor launched by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, as well as gate-source resistance and a drain current of 2A at different gate-source voltages. Manufactured using Plannar technology and packaged in TO252, it is suitable for various power supplies and circuit modules.
**Detailed parameter description:**
- VDS(V): drain-source voltage, 650V
- VGS(±V): Gate-source voltage, ±30V
- Vth(V): threshold voltage, 3.5V
- VGS=4.5V(mΩ): Gate-source resistance (VGS=4.5V), 3440mΩ
- VGS=10V(mΩ): Gate-source resistance (VGS=10V), 4300mΩ
- ID (A): Drain current, 2A
- Technology: manufacturing technology, Plannar
-Package: TO252
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Domain and module applications：
**Applicable areas and module examples:**
1. **Power module**: Since VBE165R02 has high drain-source voltage and moderate gate-source resistance, it is suitable for various power modules, including switching power supplies, inverters, etc.
2. **Drive module**: As a field effect transistor, VBE165R02 can be used in various drive modules, such as motor drive, LED drive, etc.
3. **Power control module**: In scenarios where current and voltage need to be controlled, such as power electronic converters, inverters, etc., VBE165R02 can be used as a key component.
4. **Industrial Automation**: Due to its stable and reliable performance, it is suitable for various control and drive modules in the field of industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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