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VBE1307 Product details
Back to previous pageProduct introduction：
This product is a unipolar N-channel FET with a rated drain-source voltage of 30V and a maximum drain current of 80A. At VGS=4.5V, the drain-source on-resistance is 6mΩ , 5mΩ at VGS=10V. Its threshold voltage is 1.7V and is manufactured in trench type technology. The package is TO252.
This field effect transistor is suitable for applications requiring high current and low voltage drop, and can perform excellent performance in high-power, high-frequency circuits. Its trench technology can improve the performance and stability of the device and is suitable for electronic equipment and systems requiring high efficiency and stability.
This field effect transistor is suitable for applications requiring high current and low voltage drop, and can perform excellent performance in high-power, high-frequency circuits. Its trench technology can improve the performance and stability of the device and is suitable for electronic equipment and systems requiring high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 20（±V） | 1.7V | 80A | 6 (mΩ) | 5 (mΩ) | Trench |
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 6
- Drain-source on-resistance (m次) at VGS=10V: 5
- Maximum drain current (ID): 80A
- Technology: Trench (groove type)
Package: TO252
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 6
- Drain-source on-resistance (m次) at VGS=10V: 5
- Maximum drain current (ID): 80A
- Technology: Trench (groove type)
Package: TO252
Domain and module applications：
for example:
1. **Power module**: VBE1307 can be used as a switching tube in the power module to adjust the stability and efficiency of the power output. Its low voltage drop and high drain current characteristics help reduce power loss and improve system energy efficiency.
2. **Electric vehicle control**: In the electric vehicle control system, VBE1307 can be used as the switching tube of the motor driver to control the start and stop of the motor and speed adjustment. Its high drain current and low voltage drop can meet high power and high speed driving requirements.
3. **Solar Inverter**: VBE1307 can be used in solar inverters as the switching tube of the inverter to convert the DC power generated by the solar panel into AC power. Its high drain current and low voltage drop characteristics can improve the conversion efficiency and stability of the inverter and reduce energy loss.
In short, the VBE1307 field effect transistor is suitable for applications that require high current and low voltage drop, such as power modules, electric vehicle control and solar inverters.
1. **Power module**: VBE1307 can be used as a switching tube in the power module to adjust the stability and efficiency of the power output. Its low voltage drop and high drain current characteristics help reduce power loss and improve system energy efficiency.
2. **Electric vehicle control**: In the electric vehicle control system, VBE1307 can be used as the switching tube of the motor driver to control the start and stop of the motor and speed adjustment. Its high drain current and low voltage drop can meet high power and high speed driving requirements.
3. **Solar Inverter**: VBE1307 can be used in solar inverters as the switching tube of the inverter to convert the DC power generated by the solar panel into AC power. Its high drain current and low voltage drop characteristics can improve the conversion efficiency and stability of the inverter and reduce energy loss.
In short, the VBE1307 field effect transistor is suitable for applications that require high current and low voltage drop, such as power modules, electric vehicle control and solar inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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