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VBE1252M Product details

Product introduction:

VBE1252M is a high-performance single-channel N-channel field effect transistor, suitable for medium and high power electronic equipment and modules, including power converters, motor controllers and high-power LED drivers. Its features include high rated drain-source voltage, low drain current and reliability, making it excellent in a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 250V 20(±V) 3.5V 17A 176 (mΩ) Trench
parameter:
- Type: Single N channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 250V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 176
- Maximum drain current (ID): 17A
- Technology: Trench structure (Trench)
Package: TO252

Domain and module applications:

Application examples:
1. Power converter: VBE1252M can be used as a power switch in a power converter module for efficient energy conversion and stable power output, suitable for industrial power supplies, electric vehicle chargers and other applications.
2. Motor controller: In motor control and drive systems, VBE1252M can be used in fields such as electric vehicles, industrial machinery, and robots to provide reliable motor control and efficient energy conversion.
3. High-power LED driver: In the field of lighting, VBE1252M can be used for power switching and current regulation in high-power LED driver modules to achieve efficient and stable operation of the LED lighting system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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