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VBE1154N Product details

Product introduction:

The VBE1154N is a single N-type Trench technology MOSFET with 150V drain-source voltage (VDS), ±20V gate-source voltage (VGS), 3V threshold voltage (Vth), and 32 milliohms on-resistance. It is capable of withstanding a maximum drain current (ID) of 40 amps. The device is packaged in TO252.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 150V 20(±V) 3V 40A 32 (mΩ) Trench
Model: VBE1154N
Brand: VBsemi
parameter:
- Type: Single N type
- VDS(V): 150
- VGS(㊣V): ㊣20
- Threshold voltage (V): 3
- On-resistance (miohms) at VGS=10V: 32
- Maximum drain current (ID) (amps): 40
- Technology: Trench
Package: TO252

Domain and module applications:

**Application Introduction:**
1. **Power Management**: Since VBE1154N has low drain current and moderate on-resistance, it is suitable for light-load power management applications, such as power converters and power switch modules.

2. **Consumer Electronics**: In consumer electronics, this device can be used in power modules such as mobile phone chargers and laptop adapters to achieve high efficiency and compact design.

3. **LED Driver**: Due to its low drain current and moderate on-resistance, VBE1154N can be used as a power switch module in LED driver circuits to ensure high efficiency and long life of LED lamps.

4. **Medical Equipment**: In medical equipment, this device can be used for power management and control in modules such as medical imaging equipment and electric surgical instruments to ensure the reliability and stability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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