VBE1152N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 20(±V) | 3V | 50A | 19 (mΩ) | Trench |
- Transistor type: Single N
- Rated drain-source voltage (VDS): 150V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 19
- Maximum drain current (ID): 50A
- Technology: Trench
Package: TO252
Domain and module applications:
1. **Power Management Module**: Since VBE1152N has moderate rated voltage and current characteristics, it can be used in power switching circuits in various power management modules. For example, it can be used in power inverters, power converters and other modules.
2. **LED lighting driver**: This transistor is suitable for power switching circuits in LED lighting drivers and is used to drive and control LED lamps. Its moderate voltage and current characteristics enable it to meet the driving needs of LED lighting systems.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, VBE1152N can be used in power switching circuits to control the power conversion and output of the charging pile to achieve fast charging of electric vehicles.
4. **Industrial automation controller**: Since this transistor has high drain current and low drain-source resistance, it is suitable for power switching circuits in industrial automation controllers, such as frequency converters, PLCs, etc. The power management module of the device.
Technical support:
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