VBE110MR02 Product details
Product introduction:
VBE110MR02 is a single N-channel power MOSFET launched by VBsemi. It is manufactured using Plannar technology and has the characteristics of high reliability and stable performance. Suitable for a variety of power electronics applications and ideal for electronic product design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 1000V | 30(±V) | 3.5V | 2A | 7500 (mΩ) | 6000 (mΩ) | Plannar |
- Rated voltage (VDS): 1000V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=4.5V: 7500
- On-resistance (m次) at VGS=10V: 6000
- Maximum leakage current (ID): 2A
Domain and module applications:
1. Power management module: Due to its high rated voltage and low on-resistance, VBE110MR02 is suitable for switching circuits in power management modules and can provide efficient power control and management.
2. LED lighting system: In the LED lighting system, VBE110MR02 can be used as the power switch of the LED driver to achieve stable power supply to the LED lamp beads and improve the efficiency and reliability of the lighting system.
3. Industrial control equipment: VBE110MR02 is suitable for power switch modules in industrial control equipment to achieve precise control and adjustment of industrial equipment, improve production efficiency, and save energy and reduce emissions.
The above are just some examples. VBE110MR02 can be widely used in various power electronic equipment to provide stable and reliable power control solutions for product design.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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