VBE1106N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 20(±V) | 1.8V | 25A | 57 (mΩ) | 55 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 57m次
- Drain-source on-resistance (m次) at VGS=10V: 55m次
- Drain current (ID): 25A
- Technology: Trench MOSFET
-Package:TO252
Domain and module applications:
for example:
1. Power inverter module:
VBE1106N is suitable for power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supply). Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.
2. LED lighting driver module:
In the driver module of LED lighting products, VBE1106N can be used as a power switching device to realize LED control and dimming. Its high drain current and low on-resistance can provide stable current output and ensure the brightness and stability of LED lighting products.
3. Industrial control module:
In industrial control systems, VBE1106N can be used in motor drive, power inverter and power conditioning applications. Its high performance and reliability can improve the efficiency and stability of industrial production and meet the needs of industrial production for high quality and high efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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