VBE1104NA Product details
Product introduction:
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 20(±V) | 1.8V | 38A | 37 (mΩ) | 35 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 37m次
- Drain-source on-resistance (m次) at VGS=10V: 35m次
- Drain current (ID): 38A
- Technology: Trench MOSFET
-Package:TO252
Domain and module applications:
1. Power inverter module:
VBE1104NA is suitable for power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supplies). Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.
2. Electric vehicle drive module:
In the drive modules of electric vehicles and hybrid vehicles, VBE1104NA can be used as a power switching device to control and drive the electric motor. Its high drain current and low on-resistance can provide stable current output and ensure the safety and efficiency of electric vehicles.
3. Industrial automation control module:
In industrial automation control systems, VBE1104NA can be used in motor control, power inverter and power conditioning applications. Its high performance and reliability can improve the efficiency and stability of industrial production and meet the needs of industrial production for high quality and high efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image