中文
English
IRF5305SPBF-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description:
IRF5305SPBF-VB is a P-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of -60V and a maximum continuous current of -30A. Its RDS(ON) performs well at different voltages, 58mΩ @ 10V and 70mΩ @ 4.5V respectively. The threshold voltage (Vth) ranges from -1V to -3V.
Application introduction:
IRF5305SPBF-VB is commonly used in power management, power switching and power converter applications, especially for circuits requiring P-channel MOSFET. The TO263 package makes it easy to integrate into various electronic devices and circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | 60(mΩ) | 48(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Model: IRF5305SPBF-VB
Silkscreen: VBL2658
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -60V
- Maximum continuous current: -30A
- Static on-resistance (RDS(ON)): 58mΩ @ 10V, 70mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): -1V to -3V
- Package: TO263
Silkscreen: VBL2658
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -60V
- Maximum continuous current: -30A
- Static on-resistance (RDS(ON)): 58mΩ @ 10V, 70mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): -1V to -3V
- Package: TO263
Domain and module applications：
This type of MOSFET has low on-resistance and high current carrying capacity, providing excellent performance and high efficiency, and is suitable for applications requiring high power switching, such as power switches, power inverters, power converters, motor control, battery protection circuits, etc. The flexibility of its threshold voltage range makes it suitable for a variety of circuit designs and can provide reliable performance under different voltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
