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BUK7675-55A-VB Product details

Product introduction:



Application Introduction:
BUK7675-55A-VB is an N-channel field effect transistor (MOSFET) suitable for electronic applications that require high current handling capability and low on-resistance. It has a wide range of applications in power switching, motor control, battery management and other fields.

Detailed parameter description:
1. **Type**: This is an N-channel MOSFET, which means that it turns on when a forward voltage is input. This type of MOSFET is often used in circuits that require forward voltage operation.

2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 60V. This means that it can operate under relatively high voltage conditions.

3. **Maximum continuous current (Id)**: The maximum current handling capability of this MOSFET is 40A. This enables it to handle high current loads.

4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 23mΩ, indicating very low power consumption in the on state.

5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of up to ±20V is required to control its on state.

6. **Threshold voltage (Vth)**: The threshold voltage of this MOSFET is 1.9V. This is the gate-source voltage that starts the MOSFET on.

7. **Package**: This MOSFET adopts TO263 package, which is a common power package type suitable for high-power electronic applications.



This N-channel MOSFET is suitable for electronic modules and devices that require high current handling capability and low on-resistance, providing the functions of power control and current management, especially in high-power and high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 35(mΩ) 32(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Model: BUK7675-55A-VB
Silkscreen: VBL1632
Brand: VBsemi
Parameters:
- Type: N-channel
- Rated voltage (Vds): 60V
- Maximum continuous current (Id): 40A
- On-resistance (RDS(ON)): 23mΩ @ 10V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage (Vth): 1.9V
- Package: TO263

Domain and module applications:

Applications:
BUK7675-55A-VB is a MOSFET suitable for a variety of electronic modules and devices that require high current handling capability and low on-resistance, including but not limited to the following modules:

1. **Power switch**: Can be used for high current power switching, such as voltage conversion and power stabilization.

2. **Motor control**: Used in motor controllers to control the speed and direction of motors, especially for industrial motors.

3. **Battery management**: Can be used for battery charging and discharging management to ensure safe and efficient battery use.

4. **High current load switch**: Used for on-off control of high current loads, such as power tools, welding machines and electric vehicles.

5. **Power management**: Used in power management circuits that require high current switching and current control, such as industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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