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UT9435-AB75-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi UT9435-AB75-R-VB is an N-channel MOSFET with a 60V drain-source voltage rating, 75A drain current rating, and 11mΩ on-resistance (at VGS=10V). The device is packaged in TO263 and is suitable for a variety of applications.
VBsemi UT9435-AB75-R-VB is an N-channel MOSFET with a 60V drain-source voltage rating, 75A drain current rating, and 11mΩ on-resistance (at VGS=10V). The device is packaged in TO263 and is suitable for a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Parameter Description
- **Model: ** UT9435-AB75-R-VB
- **Brand: ** VBsemi
- **Channel Type: ** N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Drain Current (ID): ** 75A
- **On-Resistance (RDS(ON)): ** 11mΩ @ VGS=10V
- **Gate-Source Threshold Voltage (Vth): ** 1.9V
- **Package: ** TO263
- **Model: ** UT9435-AB75-R-VB
- **Brand: ** VBsemi
- **Channel Type: ** N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Drain Current (ID): ** 75A
- **On-Resistance (RDS(ON)): ** 11mΩ @ VGS=10V
- **Gate-Source Threshold Voltage (Vth): ** 1.9V
- **Package: ** TO263
Domain and module applications：
### Applicable fields and module examples
1. **Power management module:** Due to its high drain current and low on-resistance, the UT9435-AB75-R-VB is suitable for various power management modules, including DC-DC converters and regulators.
2. **Motor drive:** This MOSFET can handle higher currents, so it can be used in motor drive modules such as electric vehicle controllers and brushless DC motor drivers.
3. **Lighting control:** Due to its low on-resistance and high voltage rating, it can be used in LED lighting control modules to provide efficient power conversion.
4. **Battery protection:** In battery management systems, the UT9435-AB75-R-VB can be used in battery protection circuits to ensure that the battery is not damaged in the event of an overload or short circuit.
The above are example applications of the UT9435-AB75-R-VB in various fields and modules. Due to its performance characteristics, it excels in situations where it needs to handle high currents and low on-resistance.
1. **Power management module:** Due to its high drain current and low on-resistance, the UT9435-AB75-R-VB is suitable for various power management modules, including DC-DC converters and regulators.
2. **Motor drive:** This MOSFET can handle higher currents, so it can be used in motor drive modules such as electric vehicle controllers and brushless DC motor drivers.
3. **Lighting control:** Due to its low on-resistance and high voltage rating, it can be used in LED lighting control modules to provide efficient power conversion.
4. **Battery protection:** In battery management systems, the UT9435-AB75-R-VB can be used in battery protection circuits to ensure that the battery is not damaged in the event of an overload or short circuit.
The above are example applications of the UT9435-AB75-R-VB in various fields and modules. Due to its performance characteristics, it excels in situations where it needs to handle high currents and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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