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UT9435-AB6-R-VB Product details
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VBsemi UT9435-AB6-R-VB Product Introduction:
VBsemi UT9435-AB6-R-VB is an N-channel field effect transistor with a withstand voltage of 60V, a current carrying capacity of 75A, an on-resistance (RDS(ON)) of 11mΩ at 10V and ±20V, and a gate-source voltage (VGS) threshold of 1.9V. The device is packaged in TO263 and is suitable for a variety of applications.
VBsemi UT9435-AB6-R-VB is an N-channel field effect transistor with a withstand voltage of 60V, a current carrying capacity of 75A, an on-resistance (RDS(ON)) of 11mΩ at 10V and ±20V, and a gate-source voltage (VGS) threshold of 1.9V. The device is packaged in TO263 and is suitable for a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VBsemi UT9435-AB6-R-VB Detailed parameter description:
- Product model: VBsemi UT9435-AB6-R-VB
- Silk screen: VBL1615
- Brand: VBsemi
- Channel type: N-channel
- Withstand voltage: 60V
- Current carrying capacity: 75A
- On-resistance (RDS(ON)): 11mΩ@VGS=10V;
--VGS=±20V
- Gate-source voltage (VGS) threshold: 1.9V
- Package: TO263
- Product model: VBsemi UT9435-AB6-R-VB
- Silk screen: VBL1615
- Brand: VBsemi
- Channel type: N-channel
- Withstand voltage: 60V
- Current carrying capacity: 75A
- On-resistance (RDS(ON)): 11mΩ@VGS=10V;
--VGS=±20V
- Gate-source voltage (VGS) threshold: 1.9V
- Package: TO263
Domain and module applications：
VBsemi UT9435-AB6-R-VB applicable fields and module examples:
1. Power management module: Due to its high voltage and current carrying capacity, it can be used in various power management modules, such as switching power supplies, voltage regulators, etc.
2. Motor drive: In the field of motor drive that requires high power, such as industrial automation, electric vehicles, etc., VBsemi UT9435-AB6-R-VB can be used as a driving device.
3. Lighting control: Suitable for occasions such as LED lamps that require high current drive, such as stage lighting, outdoor lighting, etc.
4. Battery management: It can be used in battery charge and discharge management circuits to ensure safe charging and discharging of batteries.
5. Automotive electronics: In the field of automotive electronics, such as electric vehicle control systems, engine control modules, etc., VBsemi UT9435-AB6-R-VB can be used as one of the key components.
1. Power management module: Due to its high voltage and current carrying capacity, it can be used in various power management modules, such as switching power supplies, voltage regulators, etc.
2. Motor drive: In the field of motor drive that requires high power, such as industrial automation, electric vehicles, etc., VBsemi UT9435-AB6-R-VB can be used as a driving device.
3. Lighting control: Suitable for occasions such as LED lamps that require high current drive, such as stage lighting, outdoor lighting, etc.
4. Battery management: It can be used in battery charge and discharge management circuits to ensure safe charging and discharging of batteries.
5. Automotive electronics: In the field of automotive electronics, such as electric vehicle control systems, engine control modules, etc., VBsemi UT9435-AB6-R-VB can be used as one of the key components.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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