Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TSSOP8 |
Dual-P+P |
-20V |
20(±V) |
-1.2V |
-7.5A |
|
18 (mΩ) |
13 (mΩ) |
Trench |
**VBC6P2216**
**Brand:** VBsemi
**parameter:**
- **Dual P+P:** Dual P+P type field effect transistor
- **VDS(V):** Collector-source voltage: -20V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -1.2V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 18m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 13m次
- **ID (A):** Drain current: -7.5A
- **Technology:** Channel process
- **Package:** TSSOP8
Domain and module applications:
**Applicable areas and module examples:**
1. **Power Management Module:** VBC6P2216 can be used for power switches and voltage regulators in power management modules. Its dual-channel P+P type design enables it to control positive and negative voltage output at the same time, and is suitable for battery charge and discharge protection, switching power supply and other scenarios.
2. **Electric vehicle control module:** In the electric vehicle control module, VBC6P2216 can be used in the motor drive control circuit. Its high drain current and low drain-source resistance enable efficient motor control, improving electric vehicle performance and stability.
3. **Industrial automation module:** In the industrial automation module, VBC6P2216 can be used for power switches and drive circuits in industrial robot control systems. Its stable performance and dual-circuit design enable it to reliably drive various industrial equipment, improving production efficiency and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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