中文
English
UT9435-AB46-R-VB Product details
Back to previous pageProduct introduction：
VBsemi UT9435-AB46-R-VB is an N-channel MOSFET with a withstand voltage of 60V and a current carrying capacity of 75A. Its RDS(ON) is 11mΩ (VGS=10V) and 20mΩ (
--VGS=±20V) at different gate-source voltages, and the gate threshold voltage (Vth) is 1.9V. The device is packaged in TO263.
The following is a product introduction, detailed parameter description, and examples of applicable fields and modules for UT9435-AB46-R-VB:
### Product Introduction
VBsemi UT9435-AB46-R-VB is a high-performance N-channel MOSFET with excellent conduction characteristics and low switching losses. It is suitable for a variety of applications requiring high-efficiency current control.
--VGS=±20V) at different gate-source voltages, and the gate threshold voltage (Vth) is 1.9V. The device is packaged in TO263.
The following is a product introduction, detailed parameter description, and examples of applicable fields and modules for UT9435-AB46-R-VB:
### Product Introduction
VBsemi UT9435-AB46-R-VB is a high-performance N-channel MOSFET with excellent conduction characteristics and low switching losses. It is suitable for a variety of applications requiring high-efficiency current control.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Parameter Description
- **Channel Type**: N-Channel
- **Withstand Voltage**: 60V
- **Maximum Current**: 75A
- **RDS(ON)**:
- When VGS=10V: 11mΩ
-
--When VGS=±20V: 20mΩ
- **Gate Threshold Voltage（Vth）**: 1.9V
- **Package**: TO263
- **Application**: High-efficiency Current Control
- **Channel Type**: N-Channel
- **Withstand Voltage**: 60V
- **Maximum Current**: 75A
- **RDS(ON)**:
- When VGS=10V: 11mΩ
-
--When VGS=±20V: 20mΩ
- **Gate Threshold Voltage（Vth）**: 1.9V
- **Package**: TO263
- **Application**: High-efficiency Current Control
Domain and module applications：
### Applicable fields and module examples
1. **Power management**:
- Switching power supply
- Inverter
2. **Drive control**:
- Motor drive
- LED drive
3. **Power inverter**:
- Solar inverter
- Automotive electronics
4. **Battery management**:
- Lithium battery protection board
- Charger management
The above is a brief introduction to VBsemi UT9435-AB46-R-VB, detailed parameter description and examples of applicable fields and modules.
1. **Power management**:
- Switching power supply
- Inverter
2. **Drive control**:
- Motor drive
- LED drive
3. **Power inverter**:
- Solar inverter
- Automotive electronics
4. **Battery management**:
- Lithium battery protection board
- Charger management
The above is a brief introduction to VBsemi UT9435-AB46-R-VB, detailed parameter description and examples of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
