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UT9435-AB105-R-VB Product details
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### Product Introduction
**Product Model: UT9435-AB105-R-VB**
**Silkscreen Code: VBL1615**
**Brand: VBsemi**
UT9435-AB105-R-VB is a high-performance N-Channel power MOSFET designed for efficient power management and drive applications. Its features include low on-resistance, high current carrying capacity and low gate drive voltage. It is packaged in TO263 and is suitable for high-power applications. UT9435-AB105-R-VB is widely used in various electronic devices and systems.
UT9435-AB105-R-VB's excellent electrical properties and wide range of applications make it an ideal choice for various high-power electronic devices and system designs. Its reliability and performance stability provide users with high-power and high-reliability solutions.
**Product Model: UT9435-AB105-R-VB**
**Silkscreen Code: VBL1615**
**Brand: VBsemi**
UT9435-AB105-R-VB is a high-performance N-Channel power MOSFET designed for efficient power management and drive applications. Its features include low on-resistance, high current carrying capacity and low gate drive voltage. It is packaged in TO263 and is suitable for high-power applications. UT9435-AB105-R-VB is widely used in various electronic devices and systems.
UT9435-AB105-R-VB's excellent electrical properties and wide range of applications make it an ideal choice for various high-power electronic devices and system designs. Its reliability and performance stability provide users with high-power and high-reliability solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Product parameters
- **Channel type**: N-Channel
- **Maximum drain-source voltage (V\_DS)**: 60V
- **Maximum continuous drain current (I\_D)**: 75A
- **On-resistance (R\_DS(ON))**: 11mΩ @ V\_GS = 10V
- **Maximum gate-source voltage (V\_GS)**: ±±20V
- **Threshold voltage (V\_th)**: 1.9V
- **Package type**: TO263
- **Brand**: VBsemi
- **Channel type**: N-Channel
- **Maximum drain-source voltage (V\_DS)**: 60V
- **Maximum continuous drain current (I\_D)**: 75A
- **On-resistance (R\_DS(ON))**: 11mΩ @ V\_GS = 10V
- **Maximum gate-source voltage (V\_GS)**: ±±20V
- **Threshold voltage (V\_th)**: 1.9V
- **Package type**: TO263
- **Brand**: VBsemi
Domain and module applications：
### Application fields and module examples
1. **Power management module**: UT9435-AB105-R-VB is suitable for various high-power power management modules, such as server power supplies and industrial power supplies. Its low on-resistance and high current carrying capacity help improve power conversion efficiency and system reliability.
2. **Electric vehicle battery management system (BMS)**: This MOSFET can be used in the charging and discharging control module in the battery management system of electric vehicles. Its high current carrying capacity and low on-resistance help improve the performance and service life of the battery.
3. **DC-DC converter**: UT9435-AB105-R-VB is commonly used in high-power DC-DC converters, suitable for fields such as industrial electronics and communication equipment. Its efficient switching characteristics and low on-resistance help improve power conversion efficiency and reduce energy loss.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in high-power load control modules, such as motor drive controllers for electric vehicles. Its high performance and reliability make it suitable for high temperature and high voltage applications in automotive environments.
5. **Industrial Automation**: UT9435-AB105-R-VB is suitable for various high-power load control modules in industrial automation control systems. Its high withstand voltage and high current carrying capacity can adapt to high-power application scenarios in industrial environments.
1. **Power management module**: UT9435-AB105-R-VB is suitable for various high-power power management modules, such as server power supplies and industrial power supplies. Its low on-resistance and high current carrying capacity help improve power conversion efficiency and system reliability.
2. **Electric vehicle battery management system (BMS)**: This MOSFET can be used in the charging and discharging control module in the battery management system of electric vehicles. Its high current carrying capacity and low on-resistance help improve the performance and service life of the battery.
3. **DC-DC converter**: UT9435-AB105-R-VB is commonly used in high-power DC-DC converters, suitable for fields such as industrial electronics and communication equipment. Its efficient switching characteristics and low on-resistance help improve power conversion efficiency and reduce energy loss.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in high-power load control modules, such as motor drive controllers for electric vehicles. Its high performance and reliability make it suitable for high temperature and high voltage applications in automotive environments.
5. **Industrial Automation**: UT9435-AB105-R-VB is suitable for various high-power load control modules in industrial automation control systems. Its high withstand voltage and high current carrying capacity can adapt to high-power application scenarios in industrial environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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