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UT9435-AB101-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
UT9435-AB101-R-VB is an N-Channel trench power MOSFET produced by VBsemi. It has a drain-source voltage rating of 60V and a maximum drain current of 75A. The on-resistance RDS(ON) when turned on is 11mΩ at VGS=10V and
--VGS=±20V respectively. The threshold voltage Vth of the device is 1.9V. The package is TO263.
UT9435-AB101-R-VB is an N-Channel trench power MOSFET produced by VBsemi. It has a drain-source voltage rating of 60V and a maximum drain current of 75A. The on-resistance RDS(ON) when turned on is 11mΩ at VGS=10V and
--VGS=±20V respectively. The threshold voltage Vth of the device is 1.9V. The package is TO263.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Detailed parameters:
- **Model:** UT9435-AB101-R-VB
- **Silkscreen:** VBL1615
- **Brand:** VBsemi
- **Channel type:** N-Channel
- **Drain-source voltage (VDS):** 60V
- **Drain current (ID):** 75A
- **On-resistance (RDS(ON)):**
- When VGS=10V: 11mΩ
-
--When VGS=±20V: 11mΩ
- **Threshold voltage (Vth):** 1.9V
- **Package:** TO263
- **Model:** UT9435-AB101-R-VB
- **Silkscreen:** VBL1615
- **Brand:** VBsemi
- **Channel type:** N-Channel
- **Drain-source voltage (VDS):** 60V
- **Drain current (ID):** 75A
- **On-resistance (RDS(ON)):**
- When VGS=10V: 11mΩ
-
--When VGS=±20V: 11mΩ
- **Threshold voltage (Vth):** 1.9V
- **Package:** TO263
Domain and module applications：
### Applications and Module Examples:
1. **Power Management Modules:** Due to its low on-resistance and high drain current rating, the UT9435-AB101-R-VB is suitable for high-performance power management modules such as DC-DC converters and switching power supplies.
2. **Motor Drivers:** In motor control, this MOSFET can be used as a motor driver, especially in applications that require high current and high switching speed.
3. **LED Lighting:** As part of an LED driver, the UT9435-AB101-R-VB can provide efficient power control in LED lighting applications.
4. **Electric Vehicle Power Management:** For electric vehicle power management units, this device can be used to control battery current and power distribution.
These examples illustrate the potential uses of the UT9435-AB101-R-VB in applications that require high performance, high power, and high efficiency.
1. **Power Management Modules:** Due to its low on-resistance and high drain current rating, the UT9435-AB101-R-VB is suitable for high-performance power management modules such as DC-DC converters and switching power supplies.
2. **Motor Drivers:** In motor control, this MOSFET can be used as a motor driver, especially in applications that require high current and high switching speed.
3. **LED Lighting:** As part of an LED driver, the UT9435-AB101-R-VB can provide efficient power control in LED lighting applications.
4. **Electric Vehicle Power Management:** For electric vehicle power management units, this device can be used to control battery current and power distribution.
These examples illustrate the potential uses of the UT9435-AB101-R-VB in applications that require high performance, high power, and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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