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RQJ0412FQDQS-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
VBsemi's RQJ0412FQDQS-VB is an N-Channel trench MOSFET with a rated voltage of 60V and a rated current of 75A. Its features include low on-resistance (RDS(ON)=11mΩ@VGS=10V) and low gate threshold voltage (Vth=1.9V). This product adopts TO263 package and is suitable for various applications.
RQJ0412FQDQS-VB is suitable for various fields requiring high-performance switching and power control, including power management, motor drive, power switching and lighting control.
VBsemi's RQJ0412FQDQS-VB is an N-Channel trench MOSFET with a rated voltage of 60V and a rated current of 75A. Its features include low on-resistance (RDS(ON)=11mΩ@VGS=10V) and low gate threshold voltage (Vth=1.9V). This product adopts TO263 package and is suitable for various applications.
RQJ0412FQDQS-VB is suitable for various fields requiring high-performance switching and power control, including power management, motor drive, power switching and lighting control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- Rated voltage (VDS): 60V
- Rated current (ID): 75A
- On-resistance (RDS(ON)): 11mΩ @ VGS=10V
- Gate voltage (VGS): ±±20V
- Gate threshold voltage (Vth): 1.9V
- Package type: TO263
- Rated voltage (VDS): 60V
- Rated current (ID): 75A
- On-resistance (RDS(ON)): 11mΩ @ VGS=10V
- Gate voltage (VGS): ±±20V
- Gate threshold voltage (Vth): 1.9V
- Package type: TO263
Domain and module applications：
Applicable fields and modules:
1. **Power management module**: Due to its high rated voltage and current capability, RQJ0412FQDQS-VB is suitable for power management modules such as switching power supplies, DC-DC converters, etc. Its low on-resistance and low gate threshold voltage help improve conversion efficiency and reduce power consumption.
2. **Motor drive**: In the field of motor drive, this MOSFET can be used to control the start, stop, speed and direction of the motor, such as in electric vehicles, industrial automation, robots and other fields. Its high rated current and low on-resistance ensure the high efficiency and reliability of the motor.
3. **Power switch**: In power switch applications, RQJ0412FQDQS-VB can be used as a switching device to realize the switching function of the circuit. It can respond quickly during the switching process to ensure the stability and safety of the circuit.
4. **Lighting control**: In the field of LED lighting control, this MOSFET can be used for dimming, color adjustment and other functions, and different brightness and color adjustments can be achieved by controlling the on and off of the LED. Its high voltage and current ratings meet the needs of lighting systems, while its low on-resistance helps reduce power consumption in lighting systems.
1. **Power management module**: Due to its high rated voltage and current capability, RQJ0412FQDQS-VB is suitable for power management modules such as switching power supplies, DC-DC converters, etc. Its low on-resistance and low gate threshold voltage help improve conversion efficiency and reduce power consumption.
2. **Motor drive**: In the field of motor drive, this MOSFET can be used to control the start, stop, speed and direction of the motor, such as in electric vehicles, industrial automation, robots and other fields. Its high rated current and low on-resistance ensure the high efficiency and reliability of the motor.
3. **Power switch**: In power switch applications, RQJ0412FQDQS-VB can be used as a switching device to realize the switching function of the circuit. It can respond quickly during the switching process to ensure the stability and safety of the circuit.
4. **Lighting control**: In the field of LED lighting control, this MOSFET can be used for dimming, color adjustment and other functions, and different brightness and color adjustments can be achieved by controlling the on and off of the LED. Its high voltage and current ratings meet the needs of lighting systems, while its low on-resistance helps reduce power consumption in lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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