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RQJ0411FQDQS-VB Product details
Back to previous pageProduct introduction：
The model RQJ0411FQDQS-VB is a VBsemi brand N-channel field effect transistor with a drain-source voltage withstand capability of 60V and a drain current withstand capability of 75A. Its on-resistance RDS(ON) is 11mΩ and the threshold voltage (Vth) is 1.9V at gate-source voltages of 10V and ±20V respectively. The device adopts TO263 package.
The following is a detailed product introduction and detailed parameter description of this model:
**Product Introduction:**
RQJ0411FQDQS-VB is a high-performance N-channel field effect transistor designed for high voltage and high current applications. Its excellent conduction characteristics and low resistance make it suitable for a variety of high-power electronic applications. The device has the characteristics of high efficiency, low power consumption and high reliability, which can meet the needs of various demanding industrial and consumer electronic devices.
The RQJ0411FQDQS-VB transistor has broad potential for application in power management, electric vehicles, industrial automation and solar energy, and can contribute to improved performance and energy efficiency of related systems.
The following is a detailed product introduction and detailed parameter description of this model:
**Product Introduction:**
RQJ0411FQDQS-VB is a high-performance N-channel field effect transistor designed for high voltage and high current applications. Its excellent conduction characteristics and low resistance make it suitable for a variety of high-power electronic applications. The device has the characteristics of high efficiency, low power consumption and high reliability, which can meet the needs of various demanding industrial and consumer electronic devices.
The RQJ0411FQDQS-VB transistor has broad potential for application in power management, electric vehicles, industrial automation and solar energy, and can contribute to improved performance and energy efficiency of related systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Detailed parameter description:**
- Voltage withstand capacity: 60V
- Drain current withstand capacity: 75A
- On-resistance (RDS(ON)):
- When VGS=10V: 11mΩ
-
--When VGS=±20V: 11mΩ
- Threshold voltage (Vth): 1.9V
- Package type: TO263
- Brand: VBsemi
- Voltage withstand capacity: 60V
- Drain current withstand capacity: 75A
- On-resistance (RDS(ON)):
- When VGS=10V: 11mΩ
-
--When VGS=±20V: 11mΩ
- Threshold voltage (Vth): 1.9V
- Package type: TO263
- Brand: VBsemi
Domain and module applications：
**Application fields and module examples:**
1. **Power management module:** Due to the high voltage and current carrying capacity of this transistor, it is very suitable for use in switching power supplies, DC-DC converters and inverters in power management modules. Its low on-resistance and high efficiency characteristics can effectively reduce energy loss and improve system performance.
2. **Electric vehicle control system:** In the control system of electric vehicles, it is necessary to deal with high current and high voltage. RQJ0411FQDQS-VB can be used as a power switch in the electric vehicle controller to achieve efficient energy conversion between the battery and the motor while ensuring the stability and reliability of the system.
3. **Industrial automation equipment:** In the field of industrial automation, most equipment needs to deal with high power and high voltage. This model of transistor can be used in the power switch and power control part of various industrial automation equipment, providing reliable power transmission and efficient energy utilization.
4. **Solar inverter:** In the solar power generation system, the inverter plays a key role in converting the DC power generated by the solar panel into AC power. RQJ0411FQDQS-VB can be used as a switch tube in the inverter to achieve efficient energy conversion and stable power output, and improve the overall efficiency of the solar power generation system.
1. **Power management module:** Due to the high voltage and current carrying capacity of this transistor, it is very suitable for use in switching power supplies, DC-DC converters and inverters in power management modules. Its low on-resistance and high efficiency characteristics can effectively reduce energy loss and improve system performance.
2. **Electric vehicle control system:** In the control system of electric vehicles, it is necessary to deal with high current and high voltage. RQJ0411FQDQS-VB can be used as a power switch in the electric vehicle controller to achieve efficient energy conversion between the battery and the motor while ensuring the stability and reliability of the system.
3. **Industrial automation equipment:** In the field of industrial automation, most equipment needs to deal with high power and high voltage. This model of transistor can be used in the power switch and power control part of various industrial automation equipment, providing reliable power transmission and efficient energy utilization.
4. **Solar inverter:** In the solar power generation system, the inverter plays a key role in converting the DC power generated by the solar panel into AC power. RQJ0411FQDQS-VB can be used as a switch tube in the inverter to achieve efficient energy conversion and stable power output, and improve the overall efficiency of the solar power generation system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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