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RQJ0409FQDQS-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
VBsemi's RQJ0409FQDQS-VB is a high-performance N-Channel MOSFET with a rated voltage of 60V and a rated current of 75A. The device is packaged in TO263 and is suitable for a variety of applications.
Detailed parameter description:
1. **Rated voltage (VDS)**: 60V is the maximum operating voltage of the device, making it suitable for most low to medium power applications.
2. **Rated current (ID)**: The rated current of 75A makes it suitable for high power applications such as power management and motor drive.
3. **On-resistance (RDS(ON))**: At a gate-source voltage of 10V, RDS(ON) is 11mΩ, providing low on-resistance and high efficiency.
4. **Threshold voltage (Vth)**: The threshold voltage of 1.9V makes it easy to drive and suitable for a wide range of control circuits.
RQJ0409FQDQS-VB is a versatile, high-performance MOSFET suitable for a wide range of power management and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VBsemi N-Channel MOSFET RQJ0409FQDQS-VB
Brand: VBsemi
Silkscreen: VBL1615
Parameters:
- N-Channel channel
- Rated voltage: 60V
- Rated current: 75A
- RDS(ON): 11mΩ @ VGS=10V
- RDS(ON): 20mΩ @
--VGS=±20V
- Threshold voltage: 1.9V
Package: TO263
Brand: VBsemi
Silkscreen: VBL1615
Parameters:
- N-Channel channel
- Rated voltage: 60V
- Rated current: 75A
- RDS(ON): 11mΩ @ VGS=10V
- RDS(ON): 20mΩ @
--VGS=±20V
- Threshold voltage: 1.9V
Package: TO263
Domain and module applications：
Examples of application areas and modules of this product:
1. **Power management**: Due to its high rated voltage and rated current, RQJ0409FQDQS-VB is suitable for switching power supplies and DC-DC converters.
2. **Motor drive**: In motor control modules, this MOSFET can be used as a current controller for the motor due to its low on-resistance and high rated current.
3. **Automotive electronics**: In automotive electronics modules, this device can be used to drive high-power loads such as vehicle lighting systems or motor controllers.
4. **Industrial automation**: In industrial control systems, this MOSFET can be used for motor control, power switching and other high-power applications.
1. **Power management**: Due to its high rated voltage and rated current, RQJ0409FQDQS-VB is suitable for switching power supplies and DC-DC converters.
2. **Motor drive**: In motor control modules, this MOSFET can be used as a current controller for the motor due to its low on-resistance and high rated current.
3. **Automotive electronics**: In automotive electronics modules, this device can be used to drive high-power loads such as vehicle lighting systems or motor controllers.
4. **Industrial automation**: In industrial control systems, this MOSFET can be used for motor control, power switching and other high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
