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RQJ0402FQDQS-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**Product Model: RQJ0402FQDQS-VB**
**Silkscreen: VBL1615**
**Brand: VBsemi**
RQJ0402FQDQS-VB is a high-performance N-channel MOSFET provided by VBsemi, suitable for various electronic applications. This MOSFET has a withstand voltage of 60V and a maximum continuous drain current of 75A, suitable for high-current, high-efficiency power management and switching applications. The device has a low RDS(ON) value (11mΩ@VGS=10V), ensuring lower conduction losses and thus improving system efficiency. The MOSFET adopts a TO-263 package for easy heat dissipation and installation.
**Product Model: RQJ0402FQDQS-VB**
**Silkscreen: VBL1615**
**Brand: VBsemi**
RQJ0402FQDQS-VB is a high-performance N-channel MOSFET provided by VBsemi, suitable for various electronic applications. This MOSFET has a withstand voltage of 60V and a maximum continuous drain current of 75A, suitable for high-current, high-efficiency power management and switching applications. The device has a low RDS(ON) value (11mΩ@VGS=10V), ensuring lower conduction losses and thus improving system efficiency. The MOSFET adopts a TO-263 package for easy heat dissipation and installation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### 2. Detailed parameter description
| Parameter name| Parameter value|
|------------------|---------------------------------------------|
| Product model| RQJ0402FQDQS-VB |
| Brand| VBsemi |
| Type| N-channel MOSFET |
| Drain-source voltage (VDS) | 60V |
| Maximum continuous drain current (ID) | 75A |
| Drain-source on-resistance (RDS(ON)) | 11mΩ @ VGS=10V |
| Gate-source voltage (VGS) | ±±20V |
| Threshold voltage (Vth) | 1.9V |
| Package type| TO-263 |
| Operating temperature range| -55°C to 175°C |
| Power dissipation (Pd) | 300W |
| Input capacitance (Ciss) | 3600pF |
| Reverse transfer capacitance (Crss) | 500pF |
| Parameter name| Parameter value|
|------------------|---------------------------------------------|
| Product model| RQJ0402FQDQS-VB |
| Brand| VBsemi |
| Type| N-channel MOSFET |
| Drain-source voltage (VDS) | 60V |
| Maximum continuous drain current (ID) | 75A |
| Drain-source on-resistance (RDS(ON)) | 11mΩ @ VGS=10V |
| Gate-source voltage (VGS) | ±±20V |
| Threshold voltage (Vth) | 1.9V |
| Package type| TO-263 |
| Operating temperature range| -55°C to 175°C |
| Power dissipation (Pd) | 300W |
| Input capacitance (Ciss) | 3600pF |
| Reverse transfer capacitance (Crss) | 500pF |
Domain and module applications：
### 3. Application fields and module examples
RQJ0402FQDQS-VB N-channel MOSFET is widely used in a variety of fields and modules. The following are several typical application examples:
1. **Power management and distributed power systems**
- **Application fields**: Applicable to servers, telecommunications equipment, data centers and high-performance computing systems.
- **Specific modules**: Used in buck converters, boost converters and synchronous rectifiers to improve power conversion efficiency and reduce heat generation.
2. **Motor drive and control**
- **Application fields**: Used in motor drive and control in industrial automation, home appliances and electric vehicles.
- **Specific modules**: Used in H-bridge circuits and three-phase motor drive circuits to achieve efficient motor control and speed regulation.
3. **Load Switch and Protection Circuit**
- **Application Area**: Applicable to consumer electronic devices, portable devices and battery management systems.
- **Specific Module**: Used in load switch circuits to achieve efficient switching and protection functions for different loads, such as battery protection circuits in smartphones, tablets and laptops.
4. **Photovoltaic Inverter and Energy Storage System**
- **Application Area**: Used in solar photovoltaic systems and energy storage systems.
- **Specific Module**: Used in photovoltaic inverters to efficiently convert DC to AC, and in energy storage systems for battery management and charge and discharge control.
By using RQJ0402FQDQS-VB, these applications can achieve higher efficiency, lower energy consumption and more reliable performance, thereby improving the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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