RQJ0401FQDQS-VB Product details
Product introduction:
### Model: RQJ0401FQDQS-VB
**Brand: VBsemi**
RQJ0401FQDQS-VB is a high-performance N-Channel MOSFET manufactured by VBsemi. It adopts TO-263 package, has high current carrying capacity and low on-resistance, and is very suitable for applications requiring high performance and reliability. This model of MOSFET is designed for an operating voltage of 60V, can carry a current of up to 75A, and its on-resistance is 11mΩ at a VGS of 10V. The device has excellent switching performance and thermal management capabilities, and is very suitable for applications in power management, industrial control and automotive electronics.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Type**: N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum drain current (ID)**: 75A
- **On-resistance (RDS(ON))**: 11mΩ @ VGS=10V
- **Gate-source voltage (VGS)**: ±±20V
- **Threshold voltage (Vth)**: 1.9V
- **Package**: TO-263
- **Operating temperature range**: -55°C to 175°C
- **Thermal resistance (junction to case)**: 1.4°C/W
- **Maximum pulsed drain current (IDM)**: 300A
Domain and module applications:
### 1. Power management
RQJ0401FQDQS-VB MOSFET is widely used in power management modules, especially in DC-DC converters and AC-DC power supplies. Its low on-resistance and high current capability enable it to efficiently manage power flow, reduce energy loss, and improve system efficiency.
### 2. Industrial control
In industrial control systems, this MOSFET can be used in motor drivers and programmable logic controllers (PLCs). Its high reliability and durability enable it to withstand high currents and high temperatures in industrial environments, ensuring stable operation of equipment.
### 3. Automotive electronics
RQJ0401FQDQS-VB is particularly suitable for various modules in automotive electronics, such as electric power steering (EPS) systems, electronic control units (ECUs), and battery management systems (BMSs). Its high current carrying capacity and high temperature resistance meet the requirements of automotive electronics for high reliability and high efficiency.
### 4. Communication equipment
In communication equipment, this MOSFET can be used in base station power modules and high-efficiency power amplifiers (PA). Its fast switching characteristics and low loss characteristics ensure high-frequency operation and low energy consumption of communication equipment.
### 5. Consumer electronics
Consumer electronic devices such as smart home systems, LED lighting and audio equipment also often use RQJ0401FQDQS-VB MOSFET. Its high efficiency and low noise characteristics provide a stable power management solution for these devices.
Through the examples of the above fields and application modules, it can be seen that the RQJ0401FQDQS-VB MOSFET can meet the needs of a variety of demanding applications with its excellent electrical performance and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image