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RQJ0398FQDQS-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: RQJ0398FQDQS-VB**
RQJ0398FQDQS-VB is an N-Channel trench power MOSFET produced by VBsemi brand. With a drain-source voltage of 60V and a continuous drain current of 75A, this product is suitable for high-efficiency power management and power conversion applications. Its low on-resistance (RDS(ON)) and lower gate voltage threshold (Vth) enable it to excel in high performance and high reliability.
**Model: RQJ0398FQDQS-VB**
RQJ0398FQDQS-VB is an N-Channel trench power MOSFET produced by VBsemi brand. With a drain-source voltage of 60V and a continuous drain current of 75A, this product is suitable for high-efficiency power management and power conversion applications. Its low on-resistance (RDS(ON)) and lower gate voltage threshold (Vth) enable it to excel in high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Detailed parameter description
- **Brand:** VBsemi
- **Model:** RQJ0398FQDQS-VB
- **Polarity:** N-Channel
- **Drain-source voltage (VDS):** 60V
- **Continuous drain current (ID):** 75A
- **On-resistance (RDS(ON)):** 11mΩ @ VGS=10V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.9V
- **Package type:** TO263
- **Brand:** VBsemi
- **Model:** RQJ0398FQDQS-VB
- **Polarity:** N-Channel
- **Drain-source voltage (VDS):** 60V
- **Continuous drain current (ID):** 75A
- **On-resistance (RDS(ON)):** 11mΩ @ VGS=10V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.9V
- **Package type:** TO263
Domain and module applications：
### Applications and Modules
**Power Management:**
RQJ0398FQDQS-VB can be used in high-efficiency power management systems, such as server power supplies and data center power systems. Its high current capability and low on-resistance make it excellent in high efficiency and high reliability.
**Electric Vehicles:**
This MOSFET is suitable for battery management systems and motor drive modules in electric vehicles. Its high current handling capability and low power consumption characteristics can meet the high efficiency and reliability requirements of electric vehicles.
**Industrial Control:**
In industrial automation and control systems, RQJ0398FQDQS-VB can be used in motor drive and power conversion modules. Its high current and low on-resistance characteristics ensure the stability and high efficiency of the system.
**Consumer Electronics:**
In high-performance consumer electronics products, such as high-power LED lighting and power adapters, this MOSFET can provide efficient power conversion and management, ensuring long product life and high reliability.
From the above application examples, it can be seen that RQJ0398FQDQS-VB, as a high-performance N-Channel power MOSFET, is widely used in various high-efficiency and high-reliability power management and power conversion systems.
**Power Management:**
RQJ0398FQDQS-VB can be used in high-efficiency power management systems, such as server power supplies and data center power systems. Its high current capability and low on-resistance make it excellent in high efficiency and high reliability.
**Electric Vehicles:**
This MOSFET is suitable for battery management systems and motor drive modules in electric vehicles. Its high current handling capability and low power consumption characteristics can meet the high efficiency and reliability requirements of electric vehicles.
**Industrial Control:**
In industrial automation and control systems, RQJ0398FQDQS-VB can be used in motor drive and power conversion modules. Its high current and low on-resistance characteristics ensure the stability and high efficiency of the system.
**Consumer Electronics:**
In high-performance consumer electronics products, such as high-power LED lighting and power adapters, this MOSFET can provide efficient power conversion and management, ensuring long product life and high reliability.
From the above application examples, it can be seen that RQJ0398FQDQS-VB, as a high-performance N-Channel power MOSFET, is widely used in various high-efficiency and high-reliability power management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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