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RQJ0389FQDQS-VB Product details
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### Product Introduction:
Model: RQJ0389FQDQS-VB
Silkscreen: VBL1615
Brand: VBsemi
Package: TO263
RQJ0389FQDQS-VB is an N-Channel trench power MOSFET with a withstand voltage of 60V and a high current carrying capacity of 75A. Its features include low on-resistance (RDS(ON)=11mΩ@VGS=10V) and low gate-source threshold voltage (Vth=1.9V), suitable for a variety of high-power applications.
RQJ0389FQDQS-VB is suitable for a variety of fields that require high power, high efficiency and stable performance, including power management, motor control, electric vehicle charging systems and industrial automation.
Model: RQJ0389FQDQS-VB
Silkscreen: VBL1615
Brand: VBsemi
Package: TO263
RQJ0389FQDQS-VB is an N-Channel trench power MOSFET with a withstand voltage of 60V and a high current carrying capacity of 75A. Its features include low on-resistance (RDS(ON)=11mΩ@VGS=10V) and low gate-source threshold voltage (Vth=1.9V), suitable for a variety of high-power applications.
RQJ0389FQDQS-VB is suitable for a variety of fields that require high power, high efficiency and stable performance, including power management, motor control, electric vehicle charging systems and industrial automation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Detailed parameter description:
- Channel type: N-Channel
- Maximum withstand voltage: 60V
- Maximum current: 75A
- On-resistance: 11mΩ @ VGS=10V
- Gate-source threshold voltage: 1.9V
- Package type: TO263
- Channel type: N-Channel
- Maximum withstand voltage: 60V
- Maximum current: 75A
- On-resistance: 11mΩ @ VGS=10V
- Gate-source threshold voltage: 1.9V
- Package type: TO263
Domain and module applications：
### Application fields and module examples:
1. **Power management module**: Due to its high withstand voltage and high current characteristics, RQJ0389FQDQS-VB is suitable for switching power supplies, inverters and other components in power management modules, and can provide stable and reliable power output. For example, in industrial control systems, it can be used in power management modules to ensure stable operation of equipment.
2. **Motor driver**: In the field of motor control, this MOSFET can be used for power switches in motor drivers to achieve efficient control and drive of motors. For example, it is used in the motor control system of electric vehicles to ensure that electric vehicles have sufficient driving force and efficient energy utilization.
3. **Electric vehicle charging system**: RQJ0389FQDQS-VB can be used as a key component in electric vehicle chargers to achieve efficient and fast battery charging functions. For example, in electric vehicle charging stations, it can be used to control charging current and ensure the safety of the charging process.
4. **Industrial Automation**: In industrial automation systems, this type of MOSFET can be used in switching power supplies, drivers and other components to provide reliable power control and drive functions. For example, in intelligent manufacturing systems, it can be used to control the movements of robots and the power management of processing equipment to improve production efficiency and quality.
1. **Power management module**: Due to its high withstand voltage and high current characteristics, RQJ0389FQDQS-VB is suitable for switching power supplies, inverters and other components in power management modules, and can provide stable and reliable power output. For example, in industrial control systems, it can be used in power management modules to ensure stable operation of equipment.
2. **Motor driver**: In the field of motor control, this MOSFET can be used for power switches in motor drivers to achieve efficient control and drive of motors. For example, it is used in the motor control system of electric vehicles to ensure that electric vehicles have sufficient driving force and efficient energy utilization.
3. **Electric vehicle charging system**: RQJ0389FQDQS-VB can be used as a key component in electric vehicle chargers to achieve efficient and fast battery charging functions. For example, in electric vehicle charging stations, it can be used to control charging current and ensure the safety of the charging process.
4. **Industrial Automation**: In industrial automation systems, this type of MOSFET can be used in switching power supplies, drivers and other components to provide reliable power control and drive functions. For example, in intelligent manufacturing systems, it can be used to control the movements of robots and the power management of processing equipment to improve production efficiency and quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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