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RQJ0311FQDQS-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
RQJ0311FQDQS-VB is an N-Channel trench MOSFET, branded as VBsemi. It has a drain-source voltage withstand capability of 60V, and a drain-source resistance of 11mΩ at a gate-source voltage of 10V. In addition, its gate-source threshold voltage is 1.9V. The device adopts TO263 package.
RQJ0311FQDQS-VB is an N-Channel trench MOSFET, branded as VBsemi. It has a drain-source voltage withstand capability of 60V, and a drain-source resistance of 11mΩ at a gate-source voltage of 10V. In addition, its gate-source threshold voltage is 1.9V. The device adopts TO263 package.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
### Parameter Description:
- Channel Type: N-Channel
- Drain-Source Voltage (VDS): 60V
- Drain Current (ID): 75A
- Drain-Source Resistance (RDS(ON)): 11mΩ @ VGS=10V
- Gate-Source Voltage (VGS): 10V
- Threshold Voltage (Vth): 1.9V
- Channel Type: N-Channel
- Drain-Source Voltage (VDS): 60V
- Drain Current (ID): 75A
- Drain-Source Resistance (RDS(ON)): 11mΩ @ VGS=10V
- Gate-Source Voltage (VGS): 10V
- Threshold Voltage (Vth): 1.9V
Domain and module applications：
### Applications and module examples:
1. **Power management module**: Due to its high current and low leakage resistance, the RQJ0311FQDQS-VB can be widely used in various types of power management modules, including DC-DC converters and regulators.
2. **Motor drive**: In applications that require high efficiency and high power output, such as the motor drive system of electric vehicles, the RQJ0311FQDQS-VB can be used as a driver MOSFET.
3. **LED lighting**: The device is also suitable for LED drive circuits and can be used in home lighting, automotive lighting, and industrial lighting.
4. **Battery protection**: The low leakage resistance and high current characteristics of the RQJ0311FQDQS-VB make it an ideal choice in battery protection modules to ensure safe operation of the battery during charging and discharging.
5. **Power switch**: In the switching power supply module, RQJ0311FQDQS-VB can be used as an efficient power switch to achieve high-speed switching and reduce power consumption.
1. **Power management module**: Due to its high current and low leakage resistance, the RQJ0311FQDQS-VB can be widely used in various types of power management modules, including DC-DC converters and regulators.
2. **Motor drive**: In applications that require high efficiency and high power output, such as the motor drive system of electric vehicles, the RQJ0311FQDQS-VB can be used as a driver MOSFET.
3. **LED lighting**: The device is also suitable for LED drive circuits and can be used in home lighting, automotive lighting, and industrial lighting.
4. **Battery protection**: The low leakage resistance and high current characteristics of the RQJ0311FQDQS-VB make it an ideal choice in battery protection modules to ensure safe operation of the battery during charging and discharging.
5. **Power switch**: In the switching power supply module, RQJ0311FQDQS-VB can be used as an efficient power switch to achieve high-speed switching and reduce power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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