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IRFS4410PBF-VB Product details

Product introduction:



Application Introduction:
IRFS4410PBF-VB is a high-performance N-Channel MOSFET suitable for high-power, high-current switching power supplies and power amplifier designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 2.5V 100A 23(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description:
- Model: IRFS4410PBF-VB
- Silk screen: VBL1101N
- Brand: VBsemi
- Package: TO263
- Channel type: N-Channel
- Rated voltage: 100V
- Rated current: 100A
- On-resistance: RDS(ON) = 10mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage: Vth = 3V

Domain and module applications:

Fields of use and functions:
1. Power modules: used in power systems such as high-power switching power supplies and DC-DC converters to provide efficient and reliable power conversion.
2. Motor control: suitable for motor drive circuits, supports high-power and high-efficiency motor control, and is widely used in the fields of industrial and automotive electrification.
3. Power tools and electric vehicles: play a role in power tools and electric vehicles that require high-power switching to improve equipment performance.
4. Power electronics: used in high-power power electronic systems such as inverters and power modulators.

Precautions for use:
1. Strictly follow the electrical parameters and packaging information in the product specification.
2. Consider heat dissipation in the design to ensure that the device operates within a safe temperature range.
3. Pay attention to the matching of input and output voltages to prevent exceeding the maximum rating of the device.
4. Ensure proper power and ground connections to ensure normal operation and prevent damage.
5. Follow relevant ESD (electrostatic discharge) protection measures during use to prevent damage to sensitive devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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