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FDG1024NZ-VB Product details

Product introduction:


Application introduction: FDG1024NZ is suitable for dual N-channel MOSFET applications, which are commonly used in logic level signal switching and current control.
The dual-channel design is suitable for controlling multiple signals.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A 110(mΩ) 86(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Dual-N+N 20V 0.5~1.5V 2.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Dual-N+N
FDG1024NZ (VBK3215N) parameter description: 2 N channels, 20V, 2A, on-resistance 150mΩ@4.5V, 170mΩ@2.5V, gate-source voltage range 8Vgs(±V), threshold voltage 0.8V, package: SC70-6.

Domain and module applications:

Applicable fields and modules: Applicable to modules in the fields of logic-level signal switches, current control and analog switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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