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HM5P55R-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
HM5P55R-VB is a P-channel field effect transistor produced by VBsemi with a drain-source voltage rating of -60V and can withstand a maximum current of -6.5A. Its features include a low on-resistance (RDS(ON)) of 58mΩ at VGS=10V and
--VGS=±20V. The gate voltage threshold (Vth) is between -1V and -3V. The device is packaged in SOT223 and is suitable for a variety of applications.
HM5P55R-VB is a P-channel field effect transistor produced by VBsemi with a drain-source voltage rating of -60V and can withstand a maximum current of -6.5A. Its features include a low on-resistance (RDS(ON)) of 58mΩ at VGS=10V and
--VGS=±20V. The gate voltage threshold (Vth) is between -1V and -3V. The device is packaged in SOT223 and is suitable for a variety of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -60V | -1.7V | -7A | 65(mΩ) | 55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -60V | -1.7V | -7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -60V | -1.7V | -7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P |
2. Detailed parameter description:
- Maximum drain-source voltage (VDSS): -60V
- Maximum continuous drain current (ID): -6.5A
- Static drain-source resistance (RDS(ON)): 58mΩ (at VGS=10V)
- Port-source voltage (VGS): ±±20V
- Gate voltage threshold (Vth): -1V to -3V
- Maximum drain-source voltage (VDSS): -60V
- Maximum continuous drain current (ID): -6.5A
- Static drain-source resistance (RDS(ON)): 58mΩ (at VGS=10V)
- Port-source voltage (VGS): ±±20V
- Gate voltage threshold (Vth): -1V to -3V
Domain and module applications：
3. Application fields and module examples:
1. Low-voltage power supply module: HM5P55R-VB is suitable for negative voltage regulators and negative voltage switch modules, providing stable negative voltage output, and is commonly found in negative voltage power supply modules in electronic devices.
2. Battery protection system: In portable electronic devices, wireless communication devices, and battery-powered systems, this device can be used for battery protection and current control to ensure safe battery operation.
3. Power management system: HM5P55R-VB can be used in power switch modules, regulators, and DC-DC converters, providing high-efficiency power conversion and current control, and is commonly found in various power management systems and power converters.
1. Low-voltage power supply module: HM5P55R-VB is suitable for negative voltage regulators and negative voltage switch modules, providing stable negative voltage output, and is commonly found in negative voltage power supply modules in electronic devices.
2. Battery protection system: In portable electronic devices, wireless communication devices, and battery-powered systems, this device can be used for battery protection and current control to ensure safe battery operation.
3. Power management system: HM5P55R-VB can be used in power switch modules, regulators, and DC-DC converters, providing high-efficiency power conversion and current control, and is commonly found in various power management systems and power converters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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