Product introduction:
Application Introduction: N3PF06 is suitable for P-channel MOSFET in applications such as power switches and inverters.
Its low on-resistance and high withstand voltage characteristics help reduce power loss and improve efficiency.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT223 |
Single-P |
-60V |
|
-1.7V |
-7A |
|
65(mΩ) |
55(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOT223 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOT223 |
Single-P |
-60V |
|
-1.7V |
-7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOT223 |
Single-P |
-60V |
|
-1.7V |
-7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOT223 |
Single-P |
|
|
|
|
|
|
|
N3PF06 (VBJ2658) parameter description: P channel, -60V, -6.5A, on-resistance 58mΩ@10V, 70mΩ@4.5V, ±20Vgs(±V), threshold voltage -1~-3V, package: SOT223.
Domain and module applications:
Applicable fields and modules: Applicable to modules in power switches, inverters and power amplifiers, especially suitable for scenarios requiring low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours